Toshiba Semiconductor and Storage
Product No:
TRS3E65H,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
G3 SIC-SBD 650V 3A TO-220-2L
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.5295
1.5295
10
1.27395
12.7395
100
1.014125
101.4125
500
0.858078
429.039
1000
0.72807
728.07
2000
0.691666
1383.332
5000
0.665665
3328.325
10000
0.643625
6436.25
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Mfr | Toshiba Semiconductor and Storage |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Active |
Capacitance @ Vr, F | 199pF @ 1V, 1MHz |
Supplier Device Package | TO-220-2L |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 45 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 3A |
Operating Temperature - Junction | 175°C |
Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 3 A |