TRS4E65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS4E65F,S1Q

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Package:

TO-220-2L

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Description:

DIODE SIL CARB 650V 4A TO220-2L

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tube
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Through Hole
Package / Case	TO-220-2
Product Status	Active
Base Product Number	TRS4E65
Capacitance @ Vr, F	16pF @ 650V, 1MHz
Supplier Device Package	TO-220-2L
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Operating Temperature - Junction	175°C (Max)
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 4 A