Toshiba Semiconductor and Storage
Product No:
TRS4E65H,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
G3 SIC-SBD 650V 4A TO-220-2L
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.7575
1.7575
10
1.4573
14.573
100
1.160045
116.0045
500
0.981578
490.789
1000
0.832846
832.846
2000
0.791208
1582.416
5000
0.761463
3807.315
10000
0.73625
7362.5
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Mfr | Toshiba Semiconductor and Storage |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Active |
Capacitance @ Vr, F | 263pF @ 1V, 1MHz |
Supplier Device Package | TO-220-2L |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 55 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 4A |
Operating Temperature - Junction | 175°C |
Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |