TRS4V65H,LQ

Toshiba Semiconductor and Storage

Product No:

TRS4V65H,LQ

Manufacturer:

Package:

4-DFN-EP (8x8)

Batch:

Datasheet:

Description:

G3 SIC-SBD 650V 4A DFN8X8

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)
Series	-
Package	Tape & Reel (TR)
Technology	SiC (Silicon Carbide) Schottky
Mounting Type	Surface Mount
Package / Case	4-VSFN Exposed Pad
Product Status	Active
Capacitance @ Vr, F	263pF @ 1V, 1MHz
Supplier Device Package	4-DFN-EP (8x8)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	55 µA @ 650 V
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Operating Temperature - Junction	175°C
Voltage - Forward (Vf) (Max) @ If	1.34 V @ 4 A