TRS6E65C,S1AQ

Toshiba Semiconductor and Storage

Product No:

TRS6E65C,S1AQ

Package:

TO-220-2L

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 6A TO220-2L

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Obsolete
Base Product Number TRS6E65
Capacitance @ Vr, F 35pF @ 650V, 1MHz
Supplier Device Package TO-220-2L
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 6A
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A