Toshiba Semiconductor and Storage
Product No:
TRS6E65F,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
DIODE SIL CARB 650V 6A TO220-2L
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.565
2.565
10
2.1565
21.565
100
1.74439
174.439
500
1.550552
775.276
1000
1.327663
1327.663
2000
1.250134
2500.268
5000
1.199375
5996.875
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Mfr | Toshiba Semiconductor and Storage |
Speed | No Recovery Time > 500mA (Io) |
Series | - |
Package | Tube |
Technology | SiC (Silicon Carbide) Schottky |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Product Status | Active |
Base Product Number | TRS6E65 |
Capacitance @ Vr, F | 22pF @ 650V, 1MHz |
Supplier Device Package | TO-220-2L |
Reverse Recovery Time (trr) | 0 ns |
Current - Reverse Leakage @ Vr | 30 µA @ 650 V |
Voltage - DC Reverse (Vr) (Max) | 650 V |
Current - Average Rectified (Io) | 6A |
Operating Temperature - Junction | 175°C (Max) |
Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 6 A |