TRS6E65H,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS6E65H,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
G3 SIC-SBD 650V 6A TO-220-2L
Quantity:
Delivery:
Payment:
In Stock : 400 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.204
2.204
10
1.8335
18.335
100
1.45939
145.939
500
1.234886
617.443
1000
1.047774
1047.774
2000
0.995391
1990.782
5000
0.957961
4789.805
10000
0.92625
9262.5
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 392pF @ 1V, 1MHz |
| Supplier Device Package | TO-220-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 70 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 6A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 6 A |
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