TRS8E65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS8E65F,S1Q

Package:

TO-220-2L

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 8A TO220-2L

Quantity:

Delivery:

Payment:

In Stock : 4

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    3.4675

    3.4675

  • 10

    2.9108

    29.108

  • 100

    2.355145

    235.5145

  • 500

    2.093458

    1046.729

  • 1000

    1.792526

    1792.526

  • 2000

    1.687856

    3375.712

  • 5000

    1.619322

    8096.61

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number TRS8E65
Capacitance @ Vr, F 28pF @ 650V, 1MHz
Supplier Device Package TO-220-2L
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 8 A