TRS8V65H,LQ

Toshiba Semiconductor and Storage

Product No:

TRS8V65H,LQ

Package:

4-DFN-EP (8x8)

Batch:

-

Datasheet:

-

Description:

G3 SIC-SBD 650V 8A DFN8X8

Quantity:

Delivery:

Payment:

In Stock : 5000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.6315

    2.6315

  • 10

    2.18595

    21.8595

  • 100

    1.74002

    174.002

  • 500

    1.472348

    736.174

  • 1000

    1.249269

    1249.269

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tape & Reel (TR)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Product Status Active
Capacitance @ Vr, F 520pF @ 1V, 1MHz
Supplier Device Package 4-DFN-EP (8x8)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Operating Temperature - Junction 175°C
Voltage - Forward (Vf) (Max) @ If 1.35 V @ 8 A