G4S06510QT
Global Power Technology-GPT
Product No:
G4S06510QT
Manufacturer:
Package:
4-DFN (8x8)
Batch:
-
Datasheet:
Description:
DIODE SIL CARB 650V 44.9A 4DFN
Quantity:
Delivery:
Payment:
In Stock : Please Inquiry 
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Product Information
Parameter Info
User Guide
| Mfr | Global Power Technology-GPT |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Cut Tape (CT) |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 4-PowerTSFN |
| Product Status | Active |
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Supplier Device Package | 4-DFN (8x8) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 44.9A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
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